| 摘要 |
PROBLEM TO BE SOLVED: To permit selection and control of uniformity and thickness of a silicon-type device layer, by using an etching stop layer formed by chemical evaporation under a device layer of a starting base. SOLUTION: A silicon single crystal semiconductor wafer 500 is used as a starting point, and a thin etching stop layer 505 having predetermined composition and thickness is epitaxially grown on the surface of the wafer 500. It is preferred that the etching stop layer 505 is a Ge compensation layer of Si-Ge doped at a high concentration, and that the dopant concentration is 10<20> -10<21> atoms/cm<3> with boron. This layer is attached by using a chemical evaporation process. Next, a thin device layer 510 having selected thickness and dopant concentration is epitaxially attached onto the etching stop layer 505. The device layer 510 may be Si, Si-Ge, Ge, or other arbitrary compound semiconductors.
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