发明名称 DISCRETE SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To make a mounting area small and high-frequency characteristics and heat radiation efficiency satisfactory, by connecting the back surfaces of a die bond pad and a wire bond pad directly to a mother board. SOLUTION: A discrete semiconductor element 8 is fixed onto the surface of a die bond pad 5 of a single-wired substrate 1 through a back electrode. The surface electrode portion of the element 8 is connected to a wire bond pad 6 of the substrate 1 via an Au wire 9. In order to protect the element 8 and the wire 9, an epoxy sealing resin 2 is molded on the top of the substrate 1. The back surfaces of the pads 5 and 6 of a semiconductor device 100 are connected to connection electrodes on a mother board 10 by a solder 11. Since the element 8 is connected directly to the board 10 through the pads 5 and 6 this way, the heat radiation characteristic of the element 8 can be improved.
申请公布号 JPH11121644(A) 申请公布日期 1999.04.30
申请号 JP19970277230 申请日期 1997.10.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 OHIRA MINORU;SENYAMA KENJI;FUJIWARA TERUHISA
分类号 H01L23/28;H01L21/56;H01L21/68;H01L23/12;H01L23/31;H05K1/02;H05K3/34 主分类号 H01L23/28
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