LIGHT EMITTING DIODE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a light emitting diode and manufacture thereof which suppresses the increase of photolithographic steps and raise the efficiency of taking out light to the outside. SOLUTION: The diode has a light emitting layer 6 on a major surface of a support semiconductor substrate not lattice-matched with GaP. This layer 6 includes an AlGaInP compd. semiconductor layer 4 lattice-matched with the support substrate and p- and n-type compd. semiconductor layers lattice-matched with the support substrate. A GaP light scattering layer 7 is formed on the light emitting layer 6 and has a rough surface to scatter light emitted from the emitting layer 6. Light take-out electrodes 8 directly adjacent to this scattering layer 7 are formed on a part of the surface of the scattering layer 7.