| 摘要 |
PROBLEM TO BE SOLVED: To reduce a recombined current component in a depletion layer so as to prevent an infrared emitting diode from deteriorating in optical output at a low current, by a method wherein a P-type epitaxial thin film high in dopant concentration is interposed between an N-type GaAs epitaxial layer and a P-type GaAs epitaxial layer. SOLUTION: An N-type GaAs epitaxial layer 2, a P-type GaAs epitaxial thin film 3, and a P-type GaAs epitaxial layer 4 are formed on an N-type GaAs substrate 1. At this point, the P-type GaAs epitaxial layer 4 is set at a certain dopant concentration so as to obtain emission light of prescribed wavelength near the P-type epitaxial thin film 3 which functions as a light emitting part. The P-type epitaxial thin film 3 is set higher in dopant concentration than the P-type GaAs epitaxial layer 4 near to it. By this setup, an infrared emitting diode of this constitution can be less deteriorated in optical output at a low current. |
