| 摘要 |
PROBLEM TO BE SOLVED: To improve the energy efficiency of heat-treatment by ultraviolet irradiation of an amorphous semiconductor thin film, by forming an anti- reflective coating having ultraviolet transparency and reducing the reflectance on the amorphous semiconductor thin film and irradiating the amorphous semiconductor thin film with ultraviolet light through the anti-refractive coating. SOLUTION: A polycrystal Si thin film 2 is formed on a quartz substrate 1. Next, after Si ions are implanted into the polycrystal Si thin film 2 to make the polycrystal Si thin film 2 amorphous, boron (B) ions are implanted, thus forming a boron-doped amorphous Si thin film 3. Next, after a SiO2 film 5 having a thickness of approximately 500Åis formed on the boron-doped amorphous Si thin film 3, the amorphous Si thin film 3 is irradiated with a pulse laser beam 6 through the SiO2 film 5. In this case, the energy loss due to reflection of the pulse laser beam on the surface of the amorphous Si thin film 3 is reduced, and the energy efficiency at carrying out heat treatment of the amorphous Si thin film 3 can be increased. |
