发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND AMPLIFIER CONTAINING THE SAME
摘要 PROBLEM TO BE SOLVED: To reduce the size of an amplifier having two stages of FETs and inter-stage matching circuit on a separate semiconductor substrate. SOLUTION: This amplifier comprises a FET 1 consisting of units U1-U2, an FET 2 composed of units U11-U16 formed such that their gate electrodes are formed in parable on the same semiconductor substrate 11, and drain lead electrodes 23a, 32a of the FETs 1, 2 are arranged on the same side face of the substrate 11, so as to facilitate connecting the FETs 1, 2 to an inter-stage matching circuit and attaining a miniaturization of the amplifier.
申请公布号 JPH11121697(A) 申请公布日期 1999.04.30
申请号 JP19970288316 申请日期 1997.10.21
申请人 TOSHIBA CORP 发明人 IMAMURA SOICHI;UENO YUTAKA;OCHI MASANORI;HOSOI SHIGEHIRO
分类号 H01L21/822;H01L27/04;H03F3/60;H03F3/68 主分类号 H01L21/822
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