LIGHT EMITTING DIODE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a light emitting diode and manufacture thereof which raises the emission intensity. SOLUTION: This diode comprises a first clad layer 2 of a first conductivity type on a major surface of a support substrate 1, an active layer 3 which is made of a semiconductor material having a smaller band gap than that of the first clad layer 2 and formed on this layer 2, and a second clad layer 4 of a second conductivity type opposite to the first one which is made of a larger band gap than that of the active layer 3 and formed thereon. At least either the first or second clad layer has a thickness part adjacent to the active layer 3 which is a layer having a lower impurity concn. than that of another thickness part. In the active layer 3 a p-n junction interface is located.