| 摘要 |
PROBLEM TO BE SOLVED: To prevent a dislocation of crystal structure in a first semiconductor layer from affecting an active layer by a second semiconductor layer where the dislocation of crystal structure hardly occurs so as to improve a GaN semi conductor device in luminous efficacy, by a method wherein the first semiconduc tor layer whose crystal structure is dislocated, the second semiconductor layer, and the active layer are successively laminated on a substrate. SOLUTION: A first GaN semiconductor layer 13 is formed on a sapphire substrate 11. A wafer is deformed by a thermal expansion coefficient difference between the sapphire substrate 11 and the GaN semiconductor layer 13 to cause dislocations 12 to the semiconductor layer 13. Then, a second semiconductor layer 14 is continuously formed over the first semiconductor layer 13 where the dislocations 12 occur. At this point, the second semiconductor layer 14 is formed of material which has a high affinity for the material of the first semiconductor layer 13. By this setup, the second conductor layer 14 serves as the base layer of the active layer 15, so that the dislocations 12 in the first semiconductor layer 13 have no effect on the formation of the active layer 15. |
