VAPOR PHASE GROWTH SYSTEM OF GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To improve the crystallinity of a gallium nitride based compound semiconductor. SOLUTION: A raw gas and a carrier gas are led into a reaction chamber 11 in a reaction tube and the vapor phase of the gallium nitride based compound semiconductor is grown on a substrate mounted on a susceptor 22 in the reaction chamber. The system has a feeding inlet 125 feeding a first gas over the substrate, a leading inlet feeding a second gas to the substrate sideways, and a gas guiding member 12 continuous to the feeding inlet and flowing down the first gas over the substrate by guiding the gas spread out downward.