| 摘要 |
PROBLEM TO BE SOLVED: To easily form a high aspect ratio hole on a silicon oxide film, by setting the carbon/fluorine ratio of a fluorocarbon film deposited on a resist film during etching within a specific range. SOLUTION: An SWP equipment using dielectric line is used as a plasma equipment. A substrate whereupon boron phosphor silicate glass is deposited is mounted on the SWP equipment, and a mixed gas of CHF3 , CO and Ar gas is supplied as an etching gas. The flow ratio of CHF3 and CO is adjusted, and when the C/F ratio in the deposited film is within a range of 1.1-1.8, especially within 1.1-1.78, the etching selective ratio of a silicon oxide film and photoresist becomes 7.5 or more, thereby etching by plasma the silicon oxide film with excellent selectivity. Thus, a hole having a diameter of 0.3μm or less, especially 0.25μm or less, and a high aspect ratio can be easily formed on the silicon oxide film.
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