MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form an oxynitride gate dielectric layer of a high K having a controlled/customized oxygen concentration and oxygen profile. SOLUTION: In a method for forming an oxynitride gate dielectric layer, a semiconductor substrate is first cleaned in a step 10. The substrate is then subjected to selective nitriding and oxidizing in steps 50 and 60 to form a thin interface layer. The substrate is subjected in a step 70 to a bulk oxynitride gate coating to form a bulk gate dielectric material (bulk dielectric layer) having customized oxygen and nitrogen profiles and concentrations. The bulk dielectric layer is then in-situ capped with polycrystalline silicon or amorphous silicon. This layer functions to protect the customized oxygen and nitrogen profiles and concentrations of the gate dielectric underlying the layer against exposure of the wafer to an oxygen atmosphere thereafter.