NON-VOLATILE AND MEMORY FABRICATED USING A DYNAMIC MEMORY PROCESS AND METHOD THEREFOR

摘要

A data processing system having a DRAM and a non-volatile memory, such as a ROM or a programmable ROM (PROM), is implemented on a single integrated circuit using DRAM data processing techniques. The DRAM is manufactured in accordance with known processing techniques. The non-volatile memory is manufactured using the same DRAM manufacturing techniques, with the addition of a processing step in which a first terminal of a stacked capacitor manufactured in accordance with the DRAM process, is coupled to a known-reference voltage. This stacked capacitor structure may be coupled to a known conductor through the formation of a via and the subsequent coupling of a conductor to the stacked capacitor structure through the via. Alternatively, the stacked capacitor structure may be coupled to the known reference voltage through an internal connection to that reference voltage. By using such methodologies, a data processing system is implemented having a DRAM and a non-volatile memory on a single integrated circuit using a same process methodology.