| 摘要 |
The invention relates to an electric semiconductor component comprising electrodes which form the source (210, 310) and drain (220, 320) and at least one gate electrode (230, 240, 330, 340) with a specific gate width. The inventive semiconductor component is characterized such that the gate electrode (230, 240, 330, 340) is at least curved in sections in a direction toward one electrode and the surface of the one electrode is smaller than half the product of the width of the one electrode and the specific gate width. The invention also relates to an electric circuit which contains at least one electric semiconductor component with electrodes which form the source (210, 310) and drain (220, 320) and at least one gate electrode (230, 240, 330, 340) with a specific gate width. The electric circuit is characterized such that, in the semiconductor component, the gate electrode (230, 240, 330, 340) is at least curved in sections in a direction toward an electrode and the surface of the one electrode is smaller than half the product of the width of the one electrode and the specific gate width. |
