| 发明名称 |
Single crystal growth method |
| 摘要 |
In the present invention a signal is caused to fall on the molten liquid surface of single crystal raw material which was put into a crucible, the position of the molten liquid surface is measured by detecting the reflected signal coming from the molten liquid surface and the crucible is lifted according to the discrepancy to the set value. <IMAGE> |
| 申请公布号 |
EP0911430(A1) |
申请公布日期 |
1999.04.28 |
| 申请号 |
EP19980114809 |
申请日期 |
1991.12.27 |
| 申请人 |
MITSUBISHI MATERIALS CORPORATION;MITSUBISHI MATERIALS SILICON CORPORATION |
发明人 |
WAKABAYASHI, DAISUKE;ANBE, TOSHIO;SAITOH, MASAO |
| 分类号 |
C30B15/00;C30B15/14;C30B15/20 |
主分类号 |
C30B15/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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