发明名称 |
Article comprising an oxide layer on GaN, and method of making the article |
摘要 |
<p>A high quality oxide layer has been formed on a GaN surface by a method that involves preparation of the GaN such that the surface is essentially atomically clean and essentially atomically ordered, and that further involves exposing the surface to evaporant from a GGG (gallium gadolinium garnet) evaporation source. MOS structures comprising the GaN/oxide combination have shown low leakage current, as well as charge accumulation and depletion. <IMAGE> <IMAGE></p> |
申请公布号 |
EP0911882(A1) |
申请公布日期 |
1999.04.28 |
申请号 |
EP19980307928 |
申请日期 |
1998.09.29 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
HOBSON, WILLIAM SCOTT;HONG, MINGHWEI;LOTHIAN, JAMES ROBERT;MANNAERTS, JOSEPH PETRUS;REN, FAN |
分类号 |
H01L21/20;H01L29/78;H01L21/28;H01L21/316;H01L29/51;H01L29/786;(IPC1-7):H01L29/51 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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