Attenuating embedded phase shift photomask blanks

摘要

Attenuating embedded phase shift photomask blanks capable of producing a phase shift of 180 DEG and having an optical transmissivity of at least 0.001 at selected lithographic wavelengths <400 nm comprise at least one layer of an aluminum compound and at least one component that is more optically absorbing than the aluminum compound at selected lithographic wavelengths <400 nm and are made by depositing at least one layer of an aluminum compound and at least one component that is more optically absorbing than the aluminum compound onto a substrate.