Method of resistless gate metal etch for fets

摘要

A method of resistless gate metal etch in the formation of a field effect transistor is disclosed, which includes providing a first layer of a first semiconductor material having a surface. A second layer of a second semiconductor material is formed on the surface and resistlessly patterned to define a masked and an unmasked portions. The unmasked portion of the second layer is etched away to the first layer to enable gate formation.