| 摘要 |
The present invention provides a quantum-well semiconductor laser device having a substrate, a first clad layer on the substrate, a first optical confinement layer on the first clad layer, an active layer on the first optical confinement layer, a second optical confinement layer on the active layer, and a second clad layer on the second optical confinement layer, each layer being formed of a semiconductor. The active layer is formed by a series of multi-layer quantum-well structures each comprising a quantum-well layer, a first barrier layer adjacent the quantum-well layer, and a second barrier layer adjacent the first barrier layer. The semiconductor of the first barrier layer has a higher energy level at a .GAMMA. point of a valence band than does the semiconductor of the second barrier layer.
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