发明名称 |
Semiconductor device and power converter using same |
摘要 |
A high voltage semiconductor device is provided with a p layer which forms a main pn-junction, a plurality of p layers which surround the p layer in a ring form, a ring-like n+ layer which further surrounds those p layers, forward field plates extending in the peripheral direction and reverse field plates extending in the inside direction, the field plates being in contact at a low resistance with the p and n+ layers and reaching the surface of an n- layer through an insulating film, the area of the field plates being not less than one half of the n- surface. This arrangement is particularly effective in stabilizing the blocking voltage of a high voltage semiconductor device which is used in a severe environment, and is very effective in improving the reliability of a high voltage control unit.
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申请公布号 |
US5898199(A) |
申请公布日期 |
1999.04.27 |
申请号 |
US19970892896 |
申请日期 |
1997.07.15 |
申请人 |
HITACHI, LTD. |
发明人 |
MORI, MUTSUHIRO;YASUDA, YASUMICHI;HOSOYA, HIROMI |
分类号 |
H01L29/41;H01L29/06;H01L29/40;H01L29/739;H01L29/74;H01L29/749;H01L29/78;H01L29/861;(IPC1-7):H01L23/58 |
主分类号 |
H01L29/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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