| 摘要 |
A system for processing a substrate with plasma. In the system, a substrate holder includes an energy application member for energizing an exposure face other than a substrate placement portion. The energy application member energizes the exposure face by an induced current when high-frequency electromagnetic wave power is applied, by heat generated upon energization, or by ion bombardment when a high-frequency electric field is applied. Perfluorocarbon 14 gas and oxygen gas introduced by a gas introduction mechanism form plasma by a power supply mechanism for etching and removing a thin film deposited on the exposure face. At this time, the etching is accelerated by energy given by the energy application member.
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