| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor ceramic small in a resistant value in a high temperature state, capable of reducing the consumption of electric power and not causing the excessive voltage drop of an equipment under a low temperature environment by adding one or more kinds of specific element oxides as auxiliaries to a main component comprising the lanthanum-cobalt oxide. SOLUTION: This semiconductor ceramic is obtained by adding the oxide of at least one of Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Ni, Cu and Zn in an amount of 0.001-1 mol.% (converted into the element) as an auxiliary component to a main component comprising a lanthanum-cobalt oxide preferably represented by Lax CoO3 [0.500<=(x)<=0.999]. A semiconductor ceramic element is obtained by forming an electrode on the semiconductor ceramic. The semiconductor ceramic element can be maintained at a B constant of about 4,000 in a temperature-rising state, and the electric resistance of the element can be reduced to decrease the consumption of electric powder. The B constant is lowered to <=4,000 at low temperature, and the rapid increase of electric resistance can effectively be relaxed. |
