发明名称 Ferroelectric memory having circuit for discharging pyroelectric charges
摘要 A ferroelectric random access memory having a discharge circuit for stably discharging pyroelectric charges generated in a ferroelectric capacitor without affecting write and read operations is provided. In the ferroelectric random access memory having the discharge circuit according to the present invention, the pyroelectric charges between the ferroelectric capacitor and the FET of the memory cell, generated during the write and read operations are automatically discharged through a resistor since the resistor is included as a discharge path between the contact point of the ferroelectric capacitor and the FET of the memory unit cell and the grounding point. Accordingly, the function of turning on and off the discharge path for discharging the pyroelectric charges is not necessary and the polarization turbulence due to the pyroelectric charges is not generated.
申请公布号 US5898609(A) 申请公布日期 1999.04.27
申请号 US19980086489 申请日期 1998.05.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOO, IN-KYEONG
分类号 G11C11/22;(IPC1-7):G11C11/22 主分类号 G11C11/22
代理机构 代理人
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