发明名称 |
Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication |
摘要 |
Dual wavelength monolithically integrated VCSELs and a method of fabrication for emitting a short wavelength light and a long wavelength light including a first mirror stack lattice matched to the surface of a substrate. A short wavelength VCSEL is fabricated and masked during the formation of a long wavelength VCSEL. Each VCSEL further including mirror pairs in a AlAs/AlGaAs material system, an active region lattice matched to a surface of the first mirror stack, and a second mirror stack lattice matched to a surface of the active region and capable of emitting either a short wavelength light or a long wavelength light, dependent upon design parameters. Electrical contacts are coupled to the active regions of the monolithically integrated short wavelength VCSEL and the long wavelength VCSEL. The dual wavelength monolithically integrated VCSELs fabricated as a semiconductor laser chip capable of read/write applications for both CDs and DVDs.
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申请公布号 |
US5898722(A) |
申请公布日期 |
1999.04.27 |
申请号 |
US19970813399 |
申请日期 |
1997.03.10 |
申请人 |
MOTOROLA, INC. |
发明人 |
RAMDANI, JAMAL;LEBBY, MICHAEL S.;JIANG, WENBIN |
分类号 |
H01S5/00;H01S5/343;H01S5/40;H01S5/42;(IPC1-7):H01S3/10;H01S3/19;H01S3/08;H01L21/20 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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