发明名称 |
Voltage and temperature compensated ring oscillator for a memory device |
摘要 |
A refresh circuit of a memory device includes a ring oscillator with a frequency stabilizing circuit. The frequency stabilizing circuit produces compensated voltage signals in response to changes in supply voltage and temperature to modify the conductances of field-effect transistors of the frequency stabilizing circuit to compensate the conductive path of the discharge current of a capacitor from the ring oscillator in order to stabilize the oscillation frequency.
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申请公布号 |
US5898343(A) |
申请公布日期 |
1999.04.27 |
申请号 |
US19970982197 |
申请日期 |
1997.12.01 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MORGAN, DONALD M. |
分类号 |
G11C7/22;H03B5/04;H03K3/03;H03K3/354;(IPC1-7):H03B5/04;G11C7/00 |
主分类号 |
G11C7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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