| 摘要 |
Process for the preparation of a substrate of the silicon on insulator type for the production of transistors. The process comprises the following stages: a) shaping the surface of a silicon substrate (10) in order to define a first region (20) and a second region (22) forming a depression with respect to the first region (20), b) formation in the first (20) and second (22) regions of a buried silicon oxide layer (26), which is level with the surface of a transition flank between the regions, c) elimination of the silicon oxide layer (26) level with the flank, d) epitaxying a silicon layer (32) on the first and second regions (20, 22) and on the transition flank, e) levelling the epitaxial layer (32) stopping at the silicon oxide layer (26).
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