发明名称 |
Process for producing a silicon single crystal and heater for carrying out the process |
摘要 |
In the production of a silicon single crystal by pulling from a silicon melt in a quartz crucible, energy is supplied at least partially inductively by a spiral heater positioned below the crucible. Also claimed is a heater in the form of a wound spiral for heating a silicon-filled crucible, the spiral windings preferably being fixed on a bottom plate below the crucible by an electrically insulating material, preferably boron nitride. |
申请公布号 |
SG64453(A1) |
申请公布日期 |
1999.04.27 |
申请号 |
SG19970003817 |
申请日期 |
1997.10.20 |
申请人 |
WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG. |
发明人 |
AMMON VON WILFRED;TOMZIG ERICH;FUCHS PAUL;GELFGAT YURI |
分类号 |
H05B6/18;C30B15/00;C30B15/14;C30B29/06;H05B6/02;H05B6/24;(IPC1-7):C30B15/14;C30B15/30 |
主分类号 |
H05B6/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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