| 摘要 |
An Anti-Parallel (AP)-Pinned SV sensor having a free layer separated from an AP-pinned layer by a conducting spacer. The AP-pinned layer includes a first, second and third pinned layers where the first pinned layer is separated from the second and third pinned layers by an anti-parallel coupling layer. An antiferromagnetic (AFM) layer is used to pin the AP-pinned layer magnetizations directions. The first pinned layer is formed over and in contact with the AFM layer. The first and second pinned layers are made of highly resistive material such as NiFeCr and the third pinned layer is made of low resistive material such as cobalt. The use of a highly resistive first and second pinned layers reduces the amount of sense current flowing in the AP-pinned layer as well as eliminating interdifussion at the AFM/first pinned layer interface resulting in larger GMR coefficient, well controlled net moment, highly stable sensor, and reduced read signal asymmetry.
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