| 发明名称 |
Mode setting circuit of semiconductor device |
| 摘要 |
Two NAND gates are provided corresponding to each of a plurality of pads. By connecting a mode switching pad to power supply potential or ground potential, one of the two NAND gates provided corresponding to each pad is activated, and the other NAND gate is non-activated. As a result, different mode select signals are provided from the output of each NAND gate.
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| 申请公布号 |
US5898316(A) |
申请公布日期 |
1999.04.27 |
| 申请号 |
US19960673244 |
申请日期 |
1996.06.27 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KATO, TETSUO;OOISHI, TSUKASA;HIDAKA, HIDETO;ASAKURA, MIKIO |
| 分类号 |
G11C11/406;G11C11/401;G11C11/407;H03K19/173;(IPC1-7):H03K19/173 |
主分类号 |
G11C11/406 |
| 代理机构 |
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