发明名称 |
InGaAsP/AlGaAs/GaAs hetero structure diode laser containing indium |
摘要 |
An InGaAsP/AlGaAs/GaAs heterostructure laser diode includes an InGaAsP quantum well and at least a cladding region of AlGaAs while essentially avoiding the deleterious effects attributed to the presence of Al in heterostructure laser diodes. Embodiments with Al present in the cladding region and with Al present in both the waveguide and the cladding regions are described.
|
申请公布号 |
US5898721(A) |
申请公布日期 |
1999.04.27 |
申请号 |
US19970800768 |
申请日期 |
1997.02.14 |
申请人 |
OPTO POWER CORPORATION |
发明人 |
HE, XIAOGUANG |
分类号 |
H01S5/32;H01S5/323;H01S5/34;H01S5/343;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|