发明名称 |
Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby |
摘要 |
Czochralski pullers are modified to grow perfect monocrystalline silicon ingots that are free of vacancy agglomerates and interstitial agglomerates, by modifying components of the Czochralski puller to produce a temperature gradient at the ingot-melt interface that is greater than about 2.5 degrees Kelvin per millimeter at the ingot axis and is also at least about equal to the temperature gradient at a diffusion length from the cylindrical edge of the ingot. By producing a temperature gradient at the ingot-melt interface that is greater than about 2.5 degrees Kelvin per millimeter at the ingot axis and that is also at least about equal to the temperature gradient at a diffusion length from the diffusion edge, an ingot-melt interface that is planar or is convex relative to the silicon melt may be produced. The ingot so pulled is sliced into a plurality of pure silicon wafers that may include point defects but that are free of vacancy agglomerates and interstitial agglomerates. |
申请公布号 |
SG64470(A1) |
申请公布日期 |
1999.04.27 |
申请号 |
SG19980000215 |
申请日期 |
1998.01.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JEA-GUN;CHO KYOO-CHUL;LEE GON-SUB |
分类号 |
H01L21/322;C30B15/00;C30B15/14;C30B15/20;C30B29/06;H01L21/208;(IPC1-7):C30B15/20 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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