| 摘要 |
A thin film transistor includes a substrate, a gate electrode on the substrate, an insulating layer on the gate electrode, source and drain electrodes having side surfaces facing each other over the insulating layer, a carrier traveling path between the source and drain electrodes being shorter than a length of the gate electrode, an active layer over the source and drain electrodes and the insulating layer, and a silicide layer on at least one of the side surfaces of the source and drain electrodes.
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