| 摘要 |
<p>PROBLEM TO BE SOLVED: To impart high resistance to oxidation and prevent mutual diffusion of materials by forming a diffusion barrier layer with a material which includes specified metals and elements. SOLUTION: A diffused barrier layer 300 is formed between a first and a second conductive layer 200 and 400 for separating the two layers and prevent mutual diffusion of materials of these layers. For the diffused barrier layer 300, a compound layer including Ta, Al, and N is used. For example, a compound layer such as a Ta-Al-N layer is used. In this case, the diffused barrier layer 300 includes a concentration of about 1-60 atomic percent of Ta. Ta can be replaced with a group 5A or a group 6A metal. At that time, the metal is included at a concentration in the same density as that of Ta, that is about 1-60 atomic percent. The densities of Al and N are also about 1-60 atomic percent. In addition the Ta-Al-N layer, a compound layer such as a Ta-Al-N-O layer which is an oxygen-added Ta-Al-N layer can also be used for the diffusion barrier layer 300.</p> |
