| 摘要 |
PROBLEM TO BE SOLVED: To provide a static type semiconductor memory in which a circuit occupancy area and power consumption are reduced and high speed access can be performed. SOLUTION: Memory blocks (55#0, 55#1) in which word lines (WL0-WLk) are driven to a selection state independently one another corresponding to each of data input/output bits (DQ0, DQ1) are provided. A memory cell 1 comprises a bipolar transistor and a MOS transistor. A current is made to flow in only a selection column in a memory block, access for a memory cell of one bit in each memory block is performed. Therefore, the number of sense amplifiers and writing drivers may be same as the number of data bits, an occupancy area of a circuit is reduced, while current consumption is reduced. |
