| 摘要 |
PROBLEM TO BE SOLVED: To always hold a contact window size const. by arranging contact windows with spacings equal at an accuracy below specified error limit in a memory cell array having repetitive diffused layers and wiring patterns. SOLUTION: Diffused layer regions 101, gate patterns 102 and contact patterns C11-C18 are disposed in unit memory cells with a fixed repetitive period. Each unit memory cell has seven contact windows arranged with equal spacings on two straight lines, except one of them. The spacing of the contact windows in the memory cell array is set at an accuracy below 10% error. This is enough to always hold the contact window size const., thereby avoiding changing the openings diameter of the contact window pattern due to the proximity effect of the photolithography. |
