| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device, which can simplify and miniaturize the device configuration in the case of using the plural laser beams of different wavelengths. SOLUTION: The output laser beam of a semiconductor laser element 1 is transmitted through a diffraction grating 3 as it is and advanced along with an optical axis Ma. On the other hand, the output laser beam of a semiconductor laser element 2 is first advanced along with an optical axis Mb and made incident to the diffraction grating 3. The 1st-order laser beam diffracted by the diffraction grating 3 is advanced along with the optical axis Ma. On the assumption that this 1st-order diffracted light is the transmitted light of the diffraction grating 3, it can be regarded from the design condition of the diffraction grating 3 its light emitting point 2A is located on the optical axis Ma of the semiconductor laser element 1, and light emitting points 1a and 2a of the semiconductor laser elements 1 and 2 apparently exist on the same optical axis Ma. Therefore, an optical system can be constituted commonly for the respective wavelengths of the semiconductor laser elements 1, and 2. |
