发明名称 Memory circuit with self-repairing function
摘要 The memory has multiple rows (14) accessible from an address bus (A). The number of rows is greater than the number of addresses used by the bus. An associative memory (20) links chosen rows with respective addresses, using a programmable location for each row to hold an address field and a validation bit. A row is selected when it is addressed and its validation bit is active.
申请公布号 FR2770020(A1) 申请公布日期 1999.04.23
申请号 FR19970013316 申请日期 1997.10.20
申请人 SGS THOMSON MICROELECTRONICS SA 发明人 SCHOELLKOPF JEAN PIERRE
分类号 G11C29/00;(IPC1-7):G11C29/00;G06F11/18 主分类号 G11C29/00
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