摘要 |
<p>PROBLEM TO BE SOLVED: To prevent deterioration of a display and to suppress cratering by applying a flattening film to cover the uneven surface of a region where transistors and display electrodes are disposed, and then forming a polyimide orienting film on the surface of the flattening film under specified conditions. SOLUTION: A flattening film 65 is formed to cover the uneven surface of a region where transistors and display electrodes are disposed and to substantially flatten the surface, and further polyimide orienting films 71, 72 are formed to 200±100Åon the surface of the flattening film 65, in such a manner that in the continuous film, the variance of film thickness is controlled to within 50Å. Thus, the orienting films 71, 72 can be formed thin, and thereby, the trapping amt. of water (supply amt.) can be decreased and deterioration of the film property due to hydrolysis can be prevented. By covering Al source- drain electrodes, Si oxide film 54 and Si nitride film 53 as insulating films 53 with the flattening film 65 of one material except an ITO display electrode, borders having different affinities can be decreased and a cratering state can be suppressed.</p> |