METHOD FOR DRY ETCHING THIN FILM AND MANUFACTURE OF THIN-FILM SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for dry etching thin film by which etching can be performed at a desired taper angle with high etching dimensional accuracy. SOLUTION: In a method for dry etching thin film, a thin film to be processed is selectively etched under a first etching condition by using a resist pattern as a mask after the resist pattern is formed on the thin film to be processed (first etching process). Then the thin film to be processed is selectively dry-etched under a second etching condition, which is different from the first etching condition by using the resist pattern as a mask (second etching process). The switch to the second etching process from the first etching process is made immediately prior to the completion of the selective etching of the thin film to be processed in the first process.