发明名称 |
METHOD FOR REWORKING WAFER FOR PRODUCING SEMICONDUCTOR DEVICE AND PRODUCTION OF SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To easily remove the whole of an abnormally applied photoresist with a thinner compsn. which is nontoxic to the human body while ensuring a proper dissolution rate, suitable volatility and viscosity. SOLUTION: In order to form a specified pattern on a semiconductor substrate, a photoresist is applied on the substrate and photographically etched (S12). When a defect is caused in the photographic etching process, the photoresist applied on the semiconductor substrate is removed (S16) with a thinner compsn. prepd. by mixing 70-80 wt.% ethyl-3-ethoxy propionate(EEP) with 17-23 wt.% ethyl lactate(EL) and 3-7 wt.%γ-butyrolactone(GBL).</p> |
申请公布号 |
JPH11109654(A) |
申请公布日期 |
1999.04.23 |
申请号 |
JP19980143225 |
申请日期 |
1998.05.25 |
申请人 |
SAMSUNG ELECTRON CO LTD |
发明人 |
DEN MISHUKU;RI SHUNTOKU;RI FURYU |
分类号 |
C11D7/26;C11D7/50;G03F7/16;G03F7/30;G03F7/42;H01L21/027;(IPC1-7):G03F7/42 |
主分类号 |
C11D7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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