发明名称 METHOD FOR REWORKING WAFER FOR PRODUCING SEMICONDUCTOR DEVICE AND PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To easily remove the whole of an abnormally applied photoresist with a thinner compsn. which is nontoxic to the human body while ensuring a proper dissolution rate, suitable volatility and viscosity. SOLUTION: In order to form a specified pattern on a semiconductor substrate, a photoresist is applied on the substrate and photographically etched (S12). When a defect is caused in the photographic etching process, the photoresist applied on the semiconductor substrate is removed (S16) with a thinner compsn. prepd. by mixing 70-80 wt.% ethyl-3-ethoxy propionate(EEP) with 17-23 wt.% ethyl lactate(EL) and 3-7 wt.%γ-butyrolactone(GBL).</p>
申请公布号 JPH11109654(A) 申请公布日期 1999.04.23
申请号 JP19980143225 申请日期 1998.05.25
申请人 SAMSUNG ELECTRON CO LTD 发明人 DEN MISHUKU;RI SHUNTOKU;RI FURYU
分类号 C11D7/26;C11D7/50;G03F7/16;G03F7/30;G03F7/42;H01L21/027;(IPC1-7):G03F7/42 主分类号 C11D7/26
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