PATTERN FORMING METHOD AND PRODUCTION OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable a device to develop a fine pattern with an aq. alkali developer without swelling by irradiating a coating film consisting of a photosensitive comopsn. contg. a carboxylic acid structure with active chemical rays and changing the carboxylic acid structure in the irradiated part into aγ- orδ- lactone structure. SOLUTION: A coating film consisting of a photosensitive comopsn. contg. a carboxylic acid structure is formed on a substrate and irradiated with active chemical rays in a prescribed pattern drape to form a latent image. A reaction is progressed by heating the film and thereafter, the film is developed by using an aq. alkali developer so that a part or the whole of the carboxylic acid structure in the irradiated part is changed into aγ- orδ-lactone structure being a carboxylic ester structure. The carboxylic acid structure for forming theγ- orδ-lactone structure is preferably aγ- orδ-hydroxycarboxylic acid structure.