| 摘要 |
PROBLEM TO BE SOLVED: To improve a shape of a contact hole provide at an inter-layer insulating film of a thin-film transistor. SOLUTION: On a transparent substrate 21 where a gate electrode 22 is provided, a silicon nitride film 23 and a silicon oxide film 24, which are to be a gate insulating film 3 are laminated. Furthermore, a polycrystalline silicon film 25 which is to be an active region, a semiconductor film are laminated. A stopper 26 is provided on the polycrystalline silicon film 25 corresponding to the gate electrode 22, and a silicon oxide film 27, a silicon nitride film 28, and a silicon oxide film 29 are so laminated, as an inter-layer insulating film, as to cover the stopper 26. A contact hole 30 is so formed, at the inter-layer insulating film, as to correspond to a source region 25s and a drain region 25d, and a source electrode 31s and drain electrode 31d are provided through the contact hole 30.
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