| 摘要 |
PROBLEM TO BE SOLVED: To reduce the generation rate of depletion defects in a semiconductor integrated circuit device which is provided with plural nonvolatile memory cells, capable of electrically writing and erasing data on a thin-film epitaxial substrate. SOLUTION: By making oxygen density in a semiconductor substrate 2S of a thin-film epitaxial substrate 2 higher than 8.5×10<17> atoms/cm<3> , the generation rate of the depletion defects is reduced. Also, by making the oxygen density of the semiconductor substrate 2S in the thin-film epitaxial substrate 2 lower than 10.5×10<17> atoms/cm<3> , atoms/cm<3> , defects caused by the precipitation of oxygen in an epitaxial layer can be suppressed.
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