| 摘要 |
PROBLEM TO BE SOLVED: To avoid causing the lift error due to irradiation with α-rays or other radiation by forming a plug layer surface like a seam and forming a capacitor electrode through a dielectric film on a conductive pattern above the plug layer. SOLUTION: The manufacturing method comprises forming an information holding transistor Tr11 having a first conductive pattern 104 as a gate electrode on a channel region held between impurity regions on a semiconductor substrate 101 surface through a gate insulation film, depositing an Si nitride 107 and Si oxide-made layer insulation film 108 on the entire substrate surface so as to cover the first conductive position 104, etching the insulation film 108 and Si nitride 107 to form contact hole, forming a W plug 111a having a seam-like surface shape in the contact hole through a Ti/Ti nitride film 110 and forming a capacitor electrode 115a above. |
