| 摘要 |
PROBLEM TO BE SOLVED: To facilitate etching while suppressing generation of surface detect by forming a metal film containing Mg or Zn on a semiconductor containing Ga and N and etching the semiconductor of metal film while heating up to a predetermined temperature. SOLUTION: An undoped GaN layer 52 of 3 μm, for example, is formed on the (0001) face of a sapphire substrate 51 by metal organic epitaxial growth (MOCVD) method and Mg is deposited by 0.1 μm, for example, on the surface of the GaN layer 52 by resistive heating method. The GaN layer deposited with Mg 53 is then heated at 300-1000 deg.C in nitrogen atmosphere and left, as it is, for a given time, e.g. 1 hour. Consequently, the GaN layer 52 underlying the Mg 53 is etched. Etching amount of the GaN layer can be controlled by regulating any one or all of the thickness of Mg 53, the heating temperature or the holding time. The heating temperature is preferably set at 400-1000 deg.C in view point of the surface finish of the GaN layer after etching and the etching efficiency. |
