| 摘要 |
PROBLEM TO BE SOLVED: To provide an easily manufacturable a II-VI compound semiconductor heterojunction element with excellent temperature characteristics and electric characteristics for effectively confining light and confining a carrier. SOLUTION: In a semiconductor element provided with an active layer, a (p) type clad layer 13 and an (n) type clad layer 12 on an InP substrate 11, the (p) type clad layer 13 is composed of a MgZnTe group compound semiconductor grid-aligned with InP, and the (n) type clad layer 12 is composed of a compound semiconductor selected from a group composed of a MgZnSeTe compound semiconductor, an MgZnCdSe compound semiconductor and a MgCdSSe compound semiconductor and grid-aligned with the InP. |
