Epitaxialstruktur für eine lichtemittierende GaP-Diode

摘要

An epitaxial structure for a GaP light-emitting diode comprises an n-type GaP single crystal substrate on which is formed a plural buffer layer epitaxially grown on the single crystal substrate, in which the buffer layer has a lower etch pit density than the etch pit density of the single crystal substrate, etch pit density decreases with each upper layer, and a GaP active layer is formed on the buffer layer.