发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE BY LOW TEMPERATURE CVD |
摘要 |
<p>Amorphous or polycrystalline silicon layers are sometimes used in the metallization steps of IC processes, for example as antireflex coatings or as etching stopper layers for etching back of tungsten. A problem is that such a layer cannot be provided by CVD or LPCVD on account of the high deposition temperature which is not compatible with standard A1 metallizations. Other deposition techniques, such as sputtering or plasma CVD, often lead to a lesser material quality, a longer processing time per wafer, or a worse step covering. According to the invention, the layer is provided by CVD or LPCVD at a temperature below 500 DEG C under the addition of Ge. The GexSi1-x layer (8) thus obtained is found to have good properties as regards step covering, optical aspects, electrical aspects, and etching aspects, and is compatible with any A1 metallization (6) already present.</p> |
申请公布号 |
WO9919902(A1) |
申请公布日期 |
1999.04.22 |
申请号 |
WO1998IB01409 |
申请日期 |
1998.09.11 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;PHILIPS AB |
发明人 |
WOERLEE, PIERRE, HERMANUS;JUFFERMANS, CASPARUS, ANTHONIUS, HENRICUS;MONTREE, ANDREAS, HUBERTUS |
分类号 |
H01L21/285;H01L21/033;H01L21/205;H01L21/302;H01L21/311;H01L21/768;H01L29/161;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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