发明名称 METHOD OF CHEMICAL VAPOR DEPOSITION OF METAL FILMS
摘要 A method of producing a thick metal film on a substrate surface with a substantially smooth surface morphology and low resistivity. A substrate is exposed to a plasma. A first thin metal film is deposited on the substrate by chemical vapor deposition. The substrate with the film deposited thereon is exposed to a plasma, and a second thin metal film is deposited on top of the first film. The substrate may undergo subsequent cycles of plasma exposure and film deposition until a desired film thickness is obtained. The resulting film has a smooth surface morphology and low resistivity.
申请公布号 WO9919532(A1) 申请公布日期 1999.04.22
申请号 WO1998US21113 申请日期 1998.10.07
申请人 TOKYO ELECTRON ARIZONA;TOKYO ELECTRON LIMITED 发明人 ARENA, CHANTAL;BERTRAM, RONALD, T.;GUIDOTTI, EMMANUEL;HILLMAN, JOSEPH, T.
分类号 C23C16/18;C23C16/44;(IPC1-7):C23C16/18 主分类号 C23C16/18
代理机构 代理人
主权项
地址