METHOD OF CHEMICAL VAPOR DEPOSITION OF METAL FILMS
摘要
A method of producing a thick metal film on a substrate surface with a substantially smooth surface morphology and low resistivity. A substrate is exposed to a plasma. A first thin metal film is deposited on the substrate by chemical vapor deposition. The substrate with the film deposited thereon is exposed to a plasma, and a second thin metal film is deposited on top of the first film. The substrate may undergo subsequent cycles of plasma exposure and film deposition until a desired film thickness is obtained. The resulting film has a smooth surface morphology and low resistivity.
申请公布号
WO9919532(A1)
申请公布日期
1999.04.22
申请号
WO1998US21113
申请日期
1998.10.07
申请人
TOKYO ELECTRON ARIZONA;TOKYO ELECTRON LIMITED
发明人
ARENA, CHANTAL;BERTRAM, RONALD, T.;GUIDOTTI, EMMANUEL;HILLMAN, JOSEPH, T.