Integrated semiconductor circuit module with internal circuit

摘要

The circuit (1), containing the IGFET (P1,2) can be operated in a number of modes. A biasing voltage generator (2a,b) provides different level voltages and polarities w.r.t. a source voltage, and a voltage with identical, equal common voltage level as the IGFET source voltage. A circuit (10) detects the operational mode of the inner circuit, and generates a selection signal (SELn,SELp) corresponding to the detected mode. The signal and the biasing voltages are received by a biasing voltage selection circuit (3,5) which applies the selected voltage to the IGFET gate.