| 摘要 |
<p>The present invention provides an ashing method in which a resist (52) is formed on a part of an underlying layer (42, 43), and elements are ion-implanted into the underlying layer (42, 43) and the resist. The resist (52) is placed in an atmosphere which includes oxygen radicals and an upper layer portion (52a), which is formed on a surface of the resist (52), and includes impurity elements, is ashed. The remaining portion (52b) of the resist (52) is ashed by increasing the amount of oxygen radicals in the atmosphere. <IMAGE></p> |
